TSAL7200_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

TSAL7200
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
94 8389
DESCRIPTION
TSAL7200 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 17°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
TSAL7200
I_e (mW/sr)
60
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 17
λ_P (nm)
940
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSAL7200
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
TEST CONDITION
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81012
Rev. 1.7, 04-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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