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TSAL6100_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs | |||
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TSAL6100
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
94 8389
DESCRIPTION
TSAL6100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
FEATURES
⢠Package type: leaded
⢠Package form: T-1¾
⢠Dimensions (in mm): â
5
⢠Peak wavelength: λp = 940 nm
⢠High reliability
⢠High radiant power
⢠High radiant intensity
⢠Angle of half intensity: Ï = ± 10°
⢠Low forward voltage
⢠Suitable for high pulse current operation
⢠Good spectral matching with Si photodetectors
⢠Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
⢠Infrared remote control units with high power reqirements
⢠Free air transmission systems
⢠Infrared source for optical counters and card readers
⢠IR source for smoke detectors
PRODUCT SUMMARY
COMPONENT
TSAL6100
Ie (mW/sr)
130
Note
Test conditions see table âBasic Characteristicsâ
Ï (deg)
± 10
λP (nm)
940
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSAL6100
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
tp/T = 0.5, tp = 100 µs
tp = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ⤠5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81009
Rev. 1.5, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
99
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