TSAL5300 Datasheet, PDF (1/8 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

TSAL5300
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL5300 is a high efficiency infrared emitting diode
in GaAs technology, molded in clear, bluegrey tinted
plastic packages.
96 11505
Features
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation _e2
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 22°
• Peak wavelength λ_p = 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to ELV 2000/53/EC,
RoHS 2002/95/EC and WEEE 2002/96/EC
Parts Table
Part
TSAL 5300
TSAL 5300
TSAL 5300
Ordering Code
TSAL5300
TSAL5300-FSZ
TSAL5300-GSZ
Applications
Infrared remote control units with high power require-
ments
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Remarks
MOQ 4000 pc (Bulk)
MOQ 5000 pc (1000 pc / Ammopack)
MOQ 5000 pc (1000 pc / Ammopack)
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
t ≤ 5 sec, 2 mm from case
Thermal Resistance Junction/
Ambient
Document Number 81008
Rev. 1.7, 08-Mar-05
Symbol
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
Value
5
100
200
1.5
210
100
- 55 to + 100
- 55 to + 100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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