TSAL5100_09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

TSAL5100
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
96 11505
DESCRIPTION
TSAL5100 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power, molded in
a blue-gray plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Leads with stand-off
• Peak wavelength: λ_p = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power reqirements
• Free air transmission systems
• Infrared source for optical counters and card readers
• IR source for smoke detectors
• Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT
TSAL5100
I_e (mW/sr)
130
Note
Test conditions see table “Basic Characteristics“
ϕ (deg)
± 10
λ_P (nm)
940
t_r (ns)
800
ORDERING INFORMATION
ORDERING CODE
TSAL5100
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
t ≤ 5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81007
Rev. 1.6, 29-Jun-09
For technical questions, contact: [e-mail]
www.vishay.com
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