TSAL5100 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

TSAL5100
Vishay Semiconductors
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL5100 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve more than 100 % radi-
ant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
• Extra high radiant power and radiant intensity
• High reliability
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λ_p = 940 nm
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
96 11505
Applications
Infrared remote control units with high power require-
ments
Free air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
1.5
A
Power Dissipation
P_V
210
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 55 to + 100
°C
Storage Temperature Range
T_stg
- 55 to + 100
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
350
K/W
Document Number 81007
Rev. 1.3, 08-Mar-05
www.vishay.com
1