TSAL4400 Datasheet, PDF (1/5 Pages) Vishay Siliconix – GaAs/GaAlAs IR Emitting Diode in ®3 mm (T.1) Package

TSAL4400
Vishay Telefunken
GaAs/GaAlAs IR Emitting Diode in ø 3 mm (T–1)
Package
Description
94 8488
TSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs
technology these emitters achieve about 100 % ra-
diant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
D Extra high radiant power
D Low forward voltage
D Suitable for high pulse current operation
D Standard T–1 (ø 3 mm) package
D Angle of half intensity ϕ = ± 25°
D Peak wavelength l_p = 940 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control units
Free air transmission systems
Infrared source for optical counters and card readers
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Test Conditions
Symbol
Value
Unit
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t_p/T = 0.5, t_p = 100 ms
t_p = 100 ms
xt 5sec, 2 mm from case
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
5
V
100
mA
200
mA
1.5
A
210
mW
100
°C
–55...+100 °C
–55...+100 °C
260
°C
350
K/W
Document Number 81006
Rev. 3, 20-May-99
www.vishay.de • FaxBack [phone]
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