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TPSMP36AHM3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Power Density Surface Mount PAR Transient Voltage Suppressors
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TPSMP6.8 thru TPSMP43A
Vishay General Semiconductor
High Power Density Surface Mount PAR®
Transient Voltage Suppressors
eSMP ® Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
VBR
PPPM (for VBR 6.8 V)
PPPM (for VBR 7.5 V to 12 V)
PPPM (for VBR 13 V to 43 V)
VWM
PD
IFSM
TJ max.
Polarity
6.8 V to 43 V
250 W
300 W
400 W
5.5 V to 36.8 V
2.5 W
40 A
185 °C
Uni-directional
Package
DO-220AA (SMP)
TYPICAL APPLICATIONS
Protection for ICs, drive transistors, signal lines of sensor
units, and electronic units in consumer, computer, industrial
and automotive applications.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Uni-direction only
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Peak power dissipation with a 10/1000 μs waveform (fig. 1 and 3) (1)(2)
Peak power pulse current with a 10/1000 μs waveform (fig. 1) (1)
Power dissipation on infinite heatsink, TA = 75 °C
PPPM
IPPM
PD
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Maximum instantaneous forward voltage at 25 A (3)
VF
Operating junction and storage temperature range
TJ, TSTG
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on PCB with 5.0 mm x 5.0 mm copper pads attached to each terminal
(3) Pulse test: 300 μs pulse width, 1 % duty cycle
VALUE
See table next page
See table next page
2.5
40
2.5
- 65 to + 185
UNIT
W
A
W
A
V
°C
Revision: 08-Oct-12
1
Document Number: 88471
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000