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TPSMA22AHE3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Surface Mount PAR Transient Voltage Suppressors
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TPSMA6.8 thru TPSMA43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
VWM
VBR
PPPM
PD
IFSM
TJ max.
Polarity
5.5 V to 36.8 V
6.8 V to 43 V
400 W
1.0 W
40 A
185 °C
Uni-directional
Package
DO-214AC (SMA)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive and telecommunication.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 3)
Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)
Power dissipation at TA = 25 °C (4)
Peak forward surge current 8.3 ms single half sine-wave (3)
Maximum instantaneous forward voltage at 25 A (3)
Operating junction and storage temperature range
PPPM
IPPM
PD
IFSM
VF
TJ, TSTG
400
See next table
1.0
40
3.5
- 65 to + 185
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal
(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum
(4) Mounted on minimum recommended pad layout
UNIT
W
A
W
A
V
°C
Revision: 17-Dec-12
1
Document Number: 88405
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000