TP0610K Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
TP0610K
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS(min) (V)
–60
r_DS(on) (W)
6 @ V_GS = –10 V
V_GS(th) (V)
–1 to –3.0
I_D (mA)
–185
FEATURES
BENEFITS
APPLICATIONS
D High-Side Switching
D Low On-Resistance: 6 Ω
D Low Threshold: –2 V (typ)
D Fast Swtiching Speed: 20 ns (typ)
D Low Input Capacitance: 20 pF (typ)
D Gate-Source ESD Protection
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
TO-236
(SOT-23)
G1
S2
3D
Top View
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulse Drain Current^b
Power Dissipation^a
Maximum Junction-to-Ambient^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 100_C
T_A = 25_C
T_A = 100_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
–60
"20
–185
–115
–800
350
140
350
–55 to 150
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71411
S-04279—Rev. C, 16-Jul-01
Unit
V
mA
mW
_C/W
_C
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