TP0610K-T1-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 60 V (D-S) MOSFET

P-Channel 60 V (D-S) MOSFET
TP0610K
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
- 60
6 at V_GS = - 10 V
V_GS(th) (V)
- 1 to - 3
I_D (mA)
- 185
TO-236
(SOT-23)
G1
3D
Marking Code: 6Kwll
6K = Part Number Code for TP0610K
w = Week Code
ll = Lot Traceability
S2
Top View
Ordering Information: TP0610K-T1-E3 (Lead (Pb)-free)
TP0610K-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• High-Side Switching
• Low On-Resistance: 6 
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 20 ns (typ.)
• Low Input Capacitance: 20 pF (typ.)
• 2000 V ESD Protection
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Power Dissipation^a
Maximum Junction-to-Ambient^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 100 °C
T_A = 25 °C
T_A = 100 °C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Limit
- 60
± 20
- 185
- 115
- 800
350
140
350
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71411
S10-1476-Rev. H, 05-Jul-10
www.vishay.com
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