TP0202K Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET
TP0202K
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
V_GS(th) (V) I_D (mA) Q_g (Typ.)
1.4 at V_GS = - 10 V - 1.3 to - 3.0 - 385
- 30
3.5 at V_GS = - 4.5 V - 1.3 to - 3.0 - 240
1000
TO-236
(SOT-23)
G1
3D
S2
Top View
Marking Code: 2Kwll
2K = Part Number Code for TP0202K
w = Week Code
ll = Lot Traceability
Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free)
TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• High-Side Switching
• Low On-Resistance: 1.2 Ω (typ.)
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 14 ns (typ.)
• Low Input Capacitance: 31 pF (typ.)
• 2000 V ESD Protection
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current^b
Power Dissipation^a
Maximum Junction-to-Ambient^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 85 °C
T_A = 25 °C
T_A = 85 °C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Limit
- 30
± 20
- 385
- 280
- 750
350
185
350
- 55 to 150
Unit
V
mA
mW
°C/W
°C
Document Number: 71609
S-83053-Rev. E, 29-Dec-08
www.vishay.com
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