TP0101T Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET, Low-Threshold

TP0101T/TS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
V_DS (V)
–20
r_DS(on) (W)
0.65 @ V_GS = –4.5 V
0.85 @ V_GS = –2.5 V
I_D (A)
TP0101T TP0101TS
–0.6
–1.0
–0.5
–0.9
FEATURES
D High-Side Switching
D Low On-Resistance: 0.45 W
D Low Threshold: 0.9 V (typ)
D Fast Switching Speed: 32 ns
D 2.5-V or Lower Operation
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching–Cell Phones, Pagers
TO-236
(SOT-23)
G1
S2
Top View
3D
Marking Code:
TP0101T: POwll
TP0101TS: PSwll
w = Week Code
l = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0101T TP0101TS^c Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^b
Power Dissipation^b
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–20
–20
V
"8
"8
–0.6
–1.0
–0.48
–3
–0.8
A
–3
–0.6
–1.0
0.35
1.0
W
0.22
0.65
–55 to 150
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambient^b
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
c. Copper lead frame.
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
Symbol
R_thJA
TP0101T TP0101TS^c Unit
357
125
_C/W
www.vishay.com
11-1