TP0101K_04 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET, Low-Threshold

New Product
TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
V_DS (V)
−20
r_DS(on) (W)
0.65 @ V_GS = −4.5 V
0.85 @ V_GS = −2.5 V
I_D (A)
−0.58
−0.5
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching−Cell Phones, Pagers
TO-236
D
(SOT-23)
G1
S2
Marking Code: K4ywl
K4 = Part Number Code for TP0101K
G
3D
y = Year Code
w = Week Code
l = Lot Traceability
100 W
Top View
S
Ordering Information: TP0101K-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^b
Power Dissipation^b
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
−20
"8
−0.58
−0.46
−2
−0.3
0.35
0.22
−55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambient^b
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72692
S-40248—Rev. A, 16-Feb-04
Symbol
R_thJA
Limits
357
Unit
V
A
W
_C
Unit
_C/W
www.vishay.com
1