TP0101K Datasheet, PDF (1/1 Pages) Vishay Siliconix – TP0101K vs. TP0101T Specification Comparison

Specification Comparison
Vishay Siliconix
TP0101K vs. TP0101T
Description: P-Channel,20-V (D-S) MOSFET, Low Threshold
Package:
SOT-23
Pin Out:
Identical
Part Number Replacements:
TP0101K-T1-E3 Replaces TP0101T-T1-E3
TP0101K-T1-E3 Replaces TP0101T-T1
Summary of Performance:
The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate
increases Gate-Body Leakage; otherwise, there is little variation regarding performance.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
TP0101K
TP0101T
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
+8
-20
+8
V
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
ID
IDM
-0.58
-0.46
-2
-0.6
-0.48
-3
A
Continuous Source Current
(MOSFET Diode Conduction)
IS
-0.3
-0.6
Power Dissipation
TA = 25°C
TA = 70°C
PD
0.35
0.35
0.22
0.22
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
357
357
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
TP0101K
Parameter
Symbol
Min
Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = -4.5 V
VGS = -2.5 V
VGS(th)
IGSS
IDSS
ID(on)
-0.5
-0.7
-1.2
-0.5
Drain-Source On-Resistance
VGS= -4.5 V
VGS = -2.5 V
rDS(on)
0.42
0.64
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching^a
gfs
1300
VSD
-0.9
Qg
1400
Qgs
300
Qgd
250
Rg
150
Turn-On Time
td(on)
25
tr
30
Turn-Off Time
td(off)
55
tf
38
NS denotes not specified in original datasheet
Max
-1.0
+5000
-1
0.65
0.85
-1.2
2200
35
45
85
60
TP0101T
Min Typ Max Unit
-0.5
-0.9
-1.5
V
+100
nA
-1
µA
-2.5
-0.5
A
0.45
0.65
0.69
0.85
Ω
1300
S
-0.9
-1.2
V
2020
3000
180
nC
720
NS
Ω
7
12
25
35
19
30
ns
9
15
Document Number 74071
11-May-05
www.vishay.com