TP0101K-T1-GE3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET, Low-Threshold

TP0101K
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.65 at V_GS = - 4.5 V
0.85 at V_GS = - 2.5 V
I_D (A)^e
- 0.58
- 0.5
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• ESD Protected: 3000 V
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems, DC/DC Converters
• Power Supply Converter Circuits
• Load/Power Switching-Cell Phones, Pagers
TO-236
D
(SOT-23)
G1
S2
Marking Code: K4ywl
K4 = Part Number Code for TP0101K
G
3D
y = Year Code
w = Week Code
l = Lot Traceability
100 Ω
Top View
S
Ordering Information: TP0101K-T1-E3 (Lead (Pb)-free)
TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^b
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current^a
I_DM
Continuous Source-Drain (Diode Current)^b
I_S
Power Dissipation^b
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
Limit
- 20
±8
- 0.58
- 0.46
-2
- 0.3
0.35
0.22
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambient^b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
Limits
357
Document Number: 72692
S-83053-Rev. B, 29-Dec-08
Unit
V
A
W
°C
Unit
°C/W
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