 English |
|
|
|
|
|
|
|
| TN3012L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 300-V (D-S) MOSFET | |||
| |||
|
N-Channel 300-V (D-S) MOSFET
TN3012L
Vishay Siliconix
PRODUCT SUMMARY
V(BR)DSS Min (V)
300
rDS(on) Max (W)
12 @ VGS = 10 V
20 @ VGS = 4.5 V
VGS(th) (V)
0.8 to 3
ID (A)
0.18
FEATURES
BENEFITS
D Low On-Resistance: 9 W
D Secondary Breakdown Free: 320 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
âRun-Awayâ
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Device Marking
Front View
âSâ TN
3012L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
300
"20
0.18
0.14
0.5
0.8
0.32
156
â55 to 150
Document Number: 70206
S-04279âRev. C, 16-Jul-01
Unit
V
A
W
_C/W
_C
www.vishay.com
11-1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese