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| TN2460L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 240-V (D-S) MOSFET | |||
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TN2460L/TN2460T
Vishay Siliconix
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TN2460L
TN2460T
V(BR)DSS Min (V)
240
rDS(on) Max (W)
60 @ VGS = 10 V
60 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8
0.5 to 1.8
ID Min (mA)
75
51
FEATURES
BENEFITS
D Low On-Resistance: 40 W
D Secondary Breakdown Free: 260 V
D Low Power/Voltage Driven
D Low Input and Output Leakage
D Excellent Thermal Stability
D Low Offset Voltage
D Full-Voltage Operation
D Easily Driven Without Buffer
D Low Error Voltage
D No High-Temperature
âRun-Awayâ
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D Telephone Mute Switches, Ringer Circuits
D Power Supply, Converters
D Motor Control
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
TN2460L
Device Marking
Front View
âSâ TN
2406L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
TO-236
(SOT-23)
G1
S2
3D
Marking Code: T2wll
T2 = Part Number Code for TN2460T
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN2460L
TN2460T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
240
"20
75
48
800
0.8
0.32
156
â55 to 150
240
"20
51
32
400
0.36
0.14
350
Notes
a. Pulse width limited by maximum junction temperature.
Unit
V
mA
W
_C/W
_C
Document Number: 70205
S-04279âRev. D , 16-Jul-01
www.vishay.com
11-1
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