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| TN0601L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFETs | |||
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TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0601L
VN0606L
VN66AFD
V(BR)DSS Min (V)
60
rDS(on) Max (W)
1.8 @ VGS = 10 V
3 @ VGS = 10 V
3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.8 to 2
0.8 to 2.5
ID (A)
0.47
0.33
1.46
FEATURES
D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
TN0601L
VN0606L
Device Marking
Front View
TN0601L
âSâ TN
0601L
xxyy
VN0606L
âSâ VN
0606L
xxyy
âSâ = Siliconix Logo
xxyy = Date Code
TO-220SD
(Tab Drain)
S
1
G
2
D
3
Top View
VN66AFD
Device Marking
Front View
VN66AFD
VN66AFD
âSâ xxyy
âSâ = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0601L
VN0606L
VN66AFDb
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ, Tstg
60
"20
0.47
0.29
1.5
0.8
0.32
156
60
"30
0.33
0.21
1.6
0.8
0.32
156
â55 to 150
60
"30
1.46
0.92
3
15
6
8.3
Unit
V
A
W
_C/W
_C
Document Number: 70201
S-04279âRev. E, 16-Jul-01
www.vishay.com
11-1
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