TN0201T Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20–V (D–S) MOSFET
TN0201T
Vishay Siliconix
PRODUCT SUMMARY
V_(BR)DSS Min (V)
20
r_DS(on) Max (W)
1.0 @ V_GS = 10 V
1.4 @ V_GS = 4.5 V
V_GS(th) (V)
1.0 to 3.0
I_D (A)
0.39
FEATURES
D Low On-Resistance: 0.75 W
D Low Threshold: <1.75 V
D Low Input Capacitance: 65 pF
D Fast Switching Speed: 15 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
G1
S2
3D
Marking Code: N1wll
N1 = Part Number Code for TN0201T
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)
Pulsed Drain Current^a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
P_D
R_thJA
T_J, T_stg
20
"20
0.39
0.25
0.75
0.35
0.22
357
–55 to 150
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
Unit
V
A
W
_C/W
_C
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