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TN0201L Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-, 30-, 40-V (D-S) MOSFETs
TN0201L/0401L, VN0300L/LS
Vishay Siliconix
N-Channel 20-, 30-, 40-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN0201L
TN0401L
VN0300L
VN0300LS
V(BR)DSS Min (V)
20
40
30
30
rDS(on) Max (W)
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
1.2 @ VGS = 10 V
VGS(th) (V)
0.5 to 2
0.5 to 2
0.8 to 2.5
0.8 to 2.5
ID (A)
0.64
0.64
0.64
0.67
FEATURES
D Low On-Resistance: 0.85 W
D Low Threshold: 1.4 V
D Low Input Capacitance: 38 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
BENEFITS
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
APPLICATIONS
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
TN0201L
TN0401L
VN0300L
Device Marking
Front View
TN0201L
“S” TN
0201L
xxyy
TN0401L
“S” TN
0401L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
VN0300L
“S” VN
0300L
xxyy
TO-92S
(Copper Lead Frame)
S
1
G
2
D
3
Top View
VN0300LS
Device Marking
Front View
VN0300LS
“S” VN
0300LS
xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol TN0201L TN0401L VN0300L
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 150_C)
Pulsed Drain Currenta
TA= 25_C
TA= 100_C
Power Dissipation
Thermal Resistance, Junction-to-Ambient
TA= 25_C
TA= 100_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
TJ, Tstg
20
"20
0.64
0.38
1.5
0.8
0.32
156
40
30
"20
"30
0.64
0.64
0.38
0.38
1.5
3
0.8
0.8
0.32
0.32
156
156
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
VN0300LS
30
"30
0.67
0.43
3
0.9
0.4
156
Unit
V
A
W
_C/W
_C
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
www.vishay.com
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