TN0200K_07 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFETs

New Product
N-Channel 20-V (D-S) MOSFETs
TN0200K
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.4 at V_GS = 4.5 V
20
0.5 at V_GS = 2.5 V
I_D (A)
0.73
0.65
FEATURES
• TrenchFET^® Power MOSFET
• ESD Protected: 4000 V
APPLICATIONS
RoHS
COMPLIANT
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers
• Battery Operated Systems, DC/DC Converters
• Solid-State Relays
• Load/Power Switching-Cell Phones, Pagers
TO-236
(SOT-23)
G1
S2
3D
Marking Code: K2ywl
K2 = Part Number Code for TN0200K
y = Year Code
w = Week Code
l = Lot Traceability
Top View
Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free)
D
100 Ω
G
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)^b
T_A = 25 °C
T_A = 70 °C
I_D
Pulsed Drain Current^a
I_DM
Continuous Source Current (Diode Conduction)^b
I_S
Power Dissipation^b
T_A = 25 °C
T_A = 70 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72678
S-71198–Rev. B, 18-Jun-07
Symbol
R_thJA
Limit
Unit
20
V
±8
0.73
0.58
A
4
0.3
0.35
W
0.22
- 55 to 150
°C
Limit
357
Unit
°C/W
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