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| TN0200K Datasheet, PDF (1/1 Pages) Vishay Siliconix – Specification Comparison TN0200K vs. TN0200T | |||
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Specification Comparison
Vishay Siliconix
TN0200K vs. TN0200T
Description: N-Channel MOSFET
Package: SOT-23
Pin Out:
Identical
Part Number Replacements:
TN0200K-T1 Replaces TN0200T-T1
TN0200K-T1âE3 (Lead Free version) Replaces TN0200T-T1
Summary of Performance:
The TN0200K is a technological upgrade with ESD protection for the original TN0200T. The ESD protection diodes on the
gate increase Gate-Body Leakage; otherwise both parts perform identically including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
TN0200K
TN0200T
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25_C
See Note
Pulsed Drain Current
Power Dissipation
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
VDS
VGS
ID
IDM
PD
Tj and Tstg
RthJA
20
"8
0.73
0.58
4
0.35
0.22
â55 to 150
357
20
"8
0.73
0.58
4
0.35
0.22
â55 to 150
357
V
A
W
_C
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
TN0200K
Static
Parameter
Symbol
Min
Typ
Max
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
VGS = 4.5 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 2.5 V
V(BR)DSS
VG(th)
IGSS
IDSS
ID(on)
rDs(on)
gfs
VSD
20
0.45
2.5
1.5
0.6
0.2
0.25
2.2
0.8
1.0
"5000
1
0.4
0.5
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
1400
2000
Qgs
190
Qgd
300
Switching
Turn-On Time
Turn-Off Time
NS denotes parameter not specified.
td(on)
tr
td(off)
tf
17
25
20
30
55
85
30
45
TN0200T
Min Typ Max Unit
20
V
0.5
0.9
1.5
"100
nA
1
mA
2.5
1.5
A
0.29
0.4
0.34
0.5
W
2.2
S
0.8
1.2
V
1900
2800
pC
50
750
nC
8
13
14
21
ns
21
30
7
11
Document Number: 73004
19-May-04
www.vishay.com
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