TEPT5600 Datasheet, PDF (1/5 Pages) Vishay Siliconix – Ambient Light Sensor

Ambient Light Sensor
TEPT5600
Vishay Semiconductors
Description
TEPT5600 is a silicon NPN epitaxial planar photo
transistor in a standard T-1 3/4" plastic package.
Peak of responsivity is in the visible spectrum. Infra-
red spectrum is suppressed.
Features
94 8390
• Responsivity adapted to human eye
• Wide angle of half sensitivity ϕ = ± 20°
• Lead (Pb)-free component
• Component in accordance with RoHS
e4
2002/95/EC and WEEE 2002/96/EC
Applications
• Replacement of cadmium sulfide (CdS) photo
resistors
• Ambient light sensor
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Collector emitter voltage
V_CEO
6
V
Emitter collector voltage
V_ECO
1.5
V
Collector current
I_C
20
mA
Total power dissipation
T_amb ≤ 55 °C
P_tot
100
mW
Junction temperature
T_j
100
°C
Operating temperature range
T_amb
- 40 to + 85
°C
Storage temperature range
T_stg
- 40 to + 100
°C
Soldering temperature
2 mm distance to package, t ≤ 3 s
T_sd
260
°C
Thermal resistance junction/
ambient
R_thJA
450
K/W
Basic Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector emitter breakdown
voltage
I_C = 0.1 mA
Collector dark current
V_CE = 5 V, E = 0
Collector-emitter capacitance V_CE = 0 V, f = 1 MHz, E = 0
Photo current
E_v = 20 lx, CIE illuminant A,
V_CE = 5 V
E_v = 100 lx, CIE illuminant A,
V_CE = 5 V
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Document Number 84768
Rev. 1.3, 28-Nov-06
Symbol
V_CEO
I_CEO
C_CEO
I_PCE
I_PCE
ϕ
λ_p
λ_0.1
Min
Typ.
Max
Unit
6
V
3
50
nA
16
pF
25
70
140
µA
350
µA
± 20
570
360 to 970
deg
nm
nm
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