TEMT1020 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Silicon Phototransistor

Silicon Phototransistor
TEMT1000 / 1020 / 1030 / 1040
Vishay Semiconductors
Description
TEMT1000 series are high speed and high sensitive
silicon NPN epitaxial planar phototransistors in SMD
package with dome lens. Due to integrated Daylight
filter devices are sensitive for IR radiation only.
Features
• High photo sensitivity
• Fast response times
• Angle of half sensitivity ϕ = ± 15°
TEMT1000
TEMT1020
TEMT1030
TEMT1040
16757
• Daylight filter matched to IR Emitters
(λ = 870 nm to 950 nm)
• Versatile terminal configurations
• Matched IR Emitter series: TSML1000
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Detector in electronic control and drive circuits
IR Detector for Daylight application
Photo interrupters
Counter
Encoder
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Emitter Collector Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
t_p/T = 0.5, t_p ≤ 10 ms
T_amb ≤ 55 °C
Storage Temperature Range
Operating Temperature Range
Soldering Temperature
t≤5s
Thermal Resistance Junction/
Ambient
Basic Characteristics
T_amb = 25 °C, unless otherwise specified
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector Emitter Voltage
Collector-emitter dark current
Collector-emitter capacitance
Angle of Half Sensitivity
I_C = 1 mA
V_CE = 20 V, E = 0
V_CE = 5 V, f = 1 MHz, E = 0
Wavelength of Peak Sensitivity
Document Number 81554
Rev. 1.5, 08-Mar-05
Symbol
Value
Unit
V_ECO
5
V
I_C
50
mA
I_CM
100
mA
P_tot
100
mW
T_j
100
°C
T_stg
- 40 to + 100
°C
T_amb
- 40 to + 85
°C
T_sd
< 260
°C
R_thJA
400
K/W
Symbol
Min
Typ.
Max
Unit
V_CEO
70
V
I_CEO
1
200
nA
C_CEO
3
pF
ϕ
±15
deg
λ_p
950
nm
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