TCET2600_10 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, AC Input

TCET2600, TCET4600
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
Dual Channel
Quad Channel
i179012-2
CE
1
A
C
8 PIN
17196_1
C
16 PIN
DVE
DESCRIPTION
The TCET2600, TCET4600 consists of a phototransistor
optically coupled to 2 gallium arsenide infrared-emitting
diodes in 8 pin or 16 lead plastic dual inline package.
FEATURES
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage)
V_IOTM = 10 kV peak
• Isolation test voltage (partial discharge test
voltage) V_pd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC)
V_IOWM = 600 V_RMS
• Rated recurring peak voltage (repetitive) V_IORM = 848 V_peak
• Thickness though insulation ≥ 0.4 mm
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI ≥ 175
• Compliant to RoHS Directive to 2002/95/EC and in
accordance WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• CSA 22.2 bulletin 5A, double protection
• DIN EN 60747-5-2 (VDE 0884)
DIN EN 60747-5-5 (pending)
• FIMKO
ORDERING INFORMATION
DIP
T
C
E
T
#
6
0
0
AGENCY CERTIFIED/ PACKAGE
UL, cUL, VDE, FIMKO
DIP-8, dual channel
DIP-16, quad channel
PART NUMBER
CTR (%)
± 5 mA
20 to 300
TCET2600
TCET4600
7.62 mm
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾ (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
INPUT
Reverse voltage
V_R
6
Forward current
I_F
± 60
Forward surge current
t_p ≤ 10 μs
I_FSM
± 1.5
Power dissipation
P_diss
100
Junction temperature
T_j
125
UNIT
V
mA
A
mW
°C
Document Number: 83726
Rev. 1.6, 10-Dec-10
For technical questions, contact: [e-mail]
www.vishay.com
1