T330P Datasheet, PDF (1/4 Pages) Vishay Siliconix – Silicon PIN Photodiode

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T330P
Vishay Semiconductors
Silicon PIN Photodiode
DESCRIPTION
T330P chip is a PIN photodiode with 0.23 mm² sensitive
area, high speed and high photo sensitivity. It is sensitive to
the visible and near infrared light spectrum with a peak
sensitivity at 900 nm. Anode is the bond pad on top,
cathode is the backside contact.
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 0.67 x 0.67 x 0.28
• Wafer diameter (in mm): 100
• Radiant sensitive area (in mm²): 0.23
• Peak sensitivity wavelength: 900 nm
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible light and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• High speed photo detector
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
T330P
I_ra (μA)
2.3
Note
• Test conditions see table “Basic Characteristics”
ϕ (deg)
± 60
λ_0.1 (nm)
430 to 1100
ORDERING INFORMATION
ORDERING CODE
PACKAGING
T330P-SD-F
Wafer sawn on foil with disco frame
Note
• MOQ: minimum order quantity
REMARKS
MOQ: 55 000 pcs
PACKAGE FORM
Chip
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Junction temperature
Operating temperature range
Storage temperature range
Storage temperature range on foil
V_R
T_j
T_amb
T_stg1
T_stg2
60
100
- 40 to + 100
- 40 to + 100
- 40 to + 50
UNIT
V
°C
°C
°C
°C
Rev. 1.0, 16-Jan-12
1
Document Number: 83490
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000