Si4420BDY Datasheet, PDF (1/1 Pages) Vishay Siliconix – N-Channel, 30-V (D-S) MOSFET

Specification Comparison
Vishay Siliconix
Si4420BDY vs. Si4420DY
Description: N-Channel, 30-V (D-S) MOSFET
Package:
SO-8
Pin Out:
Identical
Part Number Replacements:
Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3
Si4420BDY-T1-E3 Replaces Si4420DY-T1
Summary of Performance:
The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (T_A = 25^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4420BDY Si4420DY Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
+20
30
+20
V
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
ID
IDM
13.5
13.5
10.8
10.8
50
50
A
Continuous Source Current
(MOSFET Diode Conduction)
IS
2.3
2.7
Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.6
3.0
1.9
W
Operating Junction & Storage Temperature Range
Tj & Tstg
-55 to 150
-55 to 150
°C
Maximum Junction-to-Ambient
RthJA
50
42
°C/W
SPECIFICATIONS (T_J = 25^OC UNLESS OTHERWISE NOTED)
Si4420BDY
Parameter
Symbol
Min
Typ
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
VGS = 10 V
VGS(th)
1.0
IGSS
IDSS
ID(on)
30
Drain-Source On-Resistance
VGS= 10 V
VGS = 4.5 V
rDS(on)
0.007
0.009
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Time*
gfs
VSD
Qg
Qgt
Qgs
Qgd
Rg
td(on)
tr
50
0.75
16
31
6.6
4.0
0.5
1.0
15
11
Turn-Off Time*
td(off)
40
tf
12
Source-Drain Reverse Recovery Time
trr
30
NS denotes parameter not specified
Max
3.0
+100
1
0.0085
0.011
1.1
25
50
1.5
25
18
60
20
50
Si4420DY
Min Typ
Max
1.0
2.0
3.0
+100
1
30
0.0075
0.009
0.010
0.013
50
NS
1.1
29
45
58
90
12
9.5
0.5
2.1
4.6
22
35
13
20
82
125
30
45
50
75
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
Document Number 74060
06-May-05
www.vishay.com