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SUV90N06-05 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 200degree MOSFET
New Product
SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.0052 @ VGS = 10 V
0.0072 @ VGS = 4.5 V
ID (A)
90 a
TO-262
1 23
D
G
FEATURES
D TrenchFETr Power MOSFETS
D 200_C Junction Temperature
D PWM Optimized
APPLICATIONS
D Isolated DC/DC Converters
- Primary-Side Switch
D Automotive
- Fan Motors
- 12-V Boardnet
- Motor Drives
G DS
Top View
SUV90N06-05
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
VGS
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cd
ID
IDM
IAR
EAR
PD
TJ, Tstg
90a
90a
240
75
280
350c
4.3
- 55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72112
S-03079—Rev. A, 03-Feb-03
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
_C/W
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