SUR50N03-06P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUR50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0065 @ V_GS = 10 V
30
0.0095 @ V_GS = 4.5 V
TO-252
Reverse Lead DPAK
I_D (A)^b
84^b
59^b
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier Operation
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
− Desktop CPU Core
D Synchronous Rectifiers
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUR50N03-06P—E3
SUR50N03-06P-T4—E3 (altrenate tape orientation)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
27
84^b
59^b
100
25
88
8.3^a
−55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t v 10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable junction temperature, package limitation current is 50 A.
R_thJA
R_thJC
Document Number: 72182
S-32693—Rev. A, 19-Jan-04
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
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