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SUM70N03-09CP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S), 175-LC MOSFET
SUM70N03-09CP
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.0095 @ VGS = 20 V
0.014 @ VGS = 4.5 V
ID (A)
70
58
FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
D New Low Thermal Resistance Package
D 100% Rg Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
TO-263
DRAIN connected to TAB
G DS
Top View
Ordering Information: SUM70N03-09CP
SUM70N03-09CP-E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cc
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
30
"20
70
40
100
35
61b
93
3.75
−55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mountc
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 71943
S-32523—Rev. D, 08-Dec-03
Symbol
RthJA
RthJC
Limit
40
1.6
Unit
V
A
mJ
W
_C
Unit
_C/W
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