SUM40N10-30_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 °C MOSFET

SUM40N10-30
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
r_DS(on) (Ω)
100
0.030 at V_GS = 10 V
0.034 at V_GS = 6 V
I_D (A)
40
37.5
FEATURES
• TrenchFET^® Power MOSFETS
• 175 °C Junction Temperature
• Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
TO-263
G DS
Top View
Ordering Information: SUM40N10-30
SUM40N10-30-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AR
Repetitive Avalanche Energy^a
L = 0.1 mH
E_AR
Maximum Power Dissipation^a
T_C = 25 °C
T_A = 25 °C^c
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
(PCB Mount)^c
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72134
S-80272-Rev. B, 11-Feb-08
Symbol
R_thJA
R_thJC
Limit
Unit
100
V
± 20
40
23
A
75
35
61
mJ
107^b
W
3.75
- 55 to 175
°C
Limit
40
1.4
Unit
°C/W
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