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SUM40N10-30 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET
New Product
SUM40N10-30
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
100
rDS(on) (W)
0.030 @ VGS = 10 V
0.034 @ VGS = 6 V
ID (A)
40
37.5
D
TO-263
G DS
Top View
Ordering Information: SUM40N10-30
G
S
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
- Motor Drives
- 12-V Switches
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_Cc
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
100
"20
40
23
75
35
61
107b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72134
S-03538—Rev. A, 24-Mar-03
Symbol
RthJA
RthJC
Limit
40
1.4
Unit
_C/W
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