SUM40N03-30L Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUM40N03-30L
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
30
r_DS(on) (W)
0.030 @ V_GS = 10 V
0.045 @ V_GS = 4.5 V
I_D (A)
40
33
Q_g (Typ)
18
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D 100% R_g Tested
TO-263
D
DRAIN connected to TAB
G DS
Top View
Ordering Information: SUM40N03-30L—E3
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Single Pulse Avalanche Current
Repetitive Avalanche Energy^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C ^c
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
30
"20
40
36
40
30
31.25
100^b
3.75
−55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount^c
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Symbol
R_thJA
R_thJC
Limit
40
1.5
Unit
V
A
mJ
W
_C
Unit
_C/W
Document Number: 73245
S-50140—Rev. A, 24-Jan-05
www.vishay.com
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