SUM34N10-35 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

New Product
SUM34N10-35
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
100
r_DS(on) (W)
0.035 @ V_GS = 10 V
0.040 @ V_GS = 6 V
I_D (A)
34
32
D
FEATURES
D TrenchFETr Power MOSFETS
D 175_C Junction Temperature
D New Low Thermal Resistance Package
TO-263
G DS
Top View
Ordering Information: SUM34N10-35
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C^d
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
34^a
20^a
60
34
57.8
100^c
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mounted)^d
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72160
S-03415—Rev. A, 03-Mar-03
Symbol
R_thJA
R_thJC
Limit
40
1.5
Unit
_C/W
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