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SUM110N08-10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET
SUM110N08-10
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.010 @ VGS = 10 V
TO-263
G
ID (A)
110
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
− Boardnet 42-VEP and ABS
− Motor Drives
D High Current
D DC/DC Converters
G DS
Top View
Ordering Information: SUM110N08-10
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C c
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
75
"20
110
63a
350
75
280
200b
3.7
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mountc
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Symbol
RthJA
RthJC
Limit
40
0.75
Unit
_C/W
Document Number: 71838
S-32413—Rev. C, 24-Nov-03
www.vishay.com
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