SUD50P04-09L Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

New Product
SUD50P04-09L
Vishay Siliconix
P-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 40
0.0094 at V_GS = - 10 V
0.0145 at V_GS = - 4.5 V
I_D (A)^d
- 50
- 50
FEATURES
• TrenchFET^® Power MOSFETS
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
S
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD50P04-09L
SUD50P04-09L (Lead (Pb)-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 175 °C)
T_C = 25 °C
T_C = 125 °C
I_D
Pulsed Drain Current
I_DM
Avalanche Current
I_AS
Single Avalanche Energy^a
L = 0.1 mH
E_AS
Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
- 40
± 20
- 50^d
- 50^d
- 100
- 50
125
136^c
3^{b, c}
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^b
Junction-to-Case
Notes:
a. Duty cycle ≤ 1 %.
b. When Mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
t ≤ 10 sec
Steady State
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72243
S-71660-Rev. B, 06-Aug-07
Symbol
R_thJA
R_thJC
Typical
15
40
0.82
Maximum
18
50
1.1
Unit
°C/W
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