SUD50P04-08-GE3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – P-Channel 40-V (D-S) MOSFET

P-Channel 40-V (D-S) MOSFET
SUD50P04-08
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0081 at V_GS = - 10 V
- 40
0.0117 at V_GS = - 4.5 V
I_D (A)
- 50^d
- 48^d
Q_g (Typ.)
60
TO-252
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
S
Drain Connected to Tab
GDS
Top View
Ordering Information: SUD50P04-08-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 40
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
I_D
- 50^d
- 50^d
A
I_DM
- 100
Avalanche Current
I_AS
- 46
Single Avalanche Energy^a
L = 0.1 mH
E_AS
106
mJ
Maximum Power Dissipation^a
T_C = 25 °C
73.5^b
T_A = 25 °C^c
P_D
2.5
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)^c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 65594
S10-0034-Rev. A, 11-Jan-10
Symbol
R_thJA
R_thJC
Limit
50
1.7
Unit
°C/W
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