SUD50N02-11P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175℃ MOSFET

New Product
SUD50N02-11P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.011 @ V_GS = 10 V
20
0.020 @ V_GS = 4.5 V
TO-252
I_D (A)^a
18
13.5
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
APPLICATIONS
D High-Side Synchronous Buck DC/DC
Conversion
- Desktop
- Server
D
GDS
Top View
Order Number:
SUD50N02-11P
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C= 100_C
T_A = 25_C
T_C = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"20
18
13
100
4.1
6.25
38^a
-55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72094
S-22453—Rev. A, 20-Jan-03
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
19
40
3.2
Maximum
24
50
3.9
Unit
_C/W
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