SUB85N03-07P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUP/SUB85N03-07P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
30
r_DS(on) (W)
0.007 @ V_GS = 10 V
0.01 @ V_GS = 4.5 V
TO-220AB
DRAIN connected to TAB
GD S
Top View
SUP85N03-07P
I_D (A)^a
85 ^a
75
TO-263
G DS
Top View
SUB85N03-07P
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
30
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
T_C = 25_C
T_C = 100_C
Avalanche Current
Repetitive Avalanche Energy^b
L = 0.1 mH
Maximum Power Dissipation^b
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^d
Operating Junction and Storage Temperature Range
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
85^a
64
240
75
280
107^c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)^d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71147
S-00757—Rev. B, 10-Apr-00
Symbol
R_thJA
R_thJC
Limit
40
62.5
1.4
Unit
_C/W
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