STPS30L30CTPBF_12 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Schottky Rectifier, 2 x 15 A

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VS-STPS30L30CTPbF, VS-STPS30L30CT-N3
Vishay Semiconductors
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
TO-220AB
2
Common
Anode ^cathode Anode
1
3
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
I_RM max.
T_J max.
Diode variation
E_AS
TO-220AB
2 x 15 A
30 V
0.37 V
350 mA at 125 °C
150 °C
Common cathode
15 mJ
FEATURES
• 150 °C T_J operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I_F(AV)
V_RRM
V_F
T_J
Rectangular waveform
15 A_pk, T_J = 125 °C (per leg)
Range
VALUES
2 × 15
30
0.37
- 55 to 150
UNITS
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V_R
V_RWM
VS-STPS30L30CTPbF VS-STPS30L30CT-N3
30
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
per device
per leg
I_F(AV)
Maximum peak one cycle
non-repetitive surge current
I_FSM
Non-repetitive avalanche energy per leg
E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
VALUES
30
50 % duty cycle at T_C = 140 °C, rectangular waveform
15
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and
with rated V_RRM
applied
1450
220
T_J = 25 °C, I_AS = 2 A, L = 7.5 mH
15
Current decaying linearly to zero in 1 μs
Frequency limited by T_J maximum V_A = 1.5 x V_R typical
2
UNITS
A
mJ
A
Revision: 30-Aug-11
1
Document Number: 94328
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