SS5P3 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Current Density Surface Mount Schottky Barrier Rectifiers

New Product
SS5P3 & SS5P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^TM Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
5A
30 V, 40 V
150 A
E_AS
V_F at I_F = 5.0 A
T_J max.
20 mJ
0.403 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters and polarity
protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for commercial grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
V_RRM
I_F(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I_FSM
Non-repetitive avalanche energy
at I_AS = 2 A, T_J = 25 °C
Operating junction and storage temperature range
E_AS
T_J, T_STG
SS5P3
SS5P4
S53
S54
30
40
5.0
150
20
- 55 to + 150
UNIT
V
A
A
mJ
°C
Document Number: 88982
Revision: 22-Nov-07
www.vishay.com
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