SS5P10_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Current Density Surface Mount

www.vishay.com
SS5P9, SS5P10
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 5.0 A
I_R
T_J max.
5.0 A
90 V, 100 V
150 A
0.649 V
4.5 μA
150 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2.0 A, T_J = 25 °C
Operating junction and storage temperature range
E_AS
T_J, T_STG
SS5P9
S59
90
SS5P10
S510
100
5.0
150
20
- 55 to + 150
UNIT
V
A
A
mJ
°C
Revision: 18-Jun-12
1
Document Number: 88984
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000