SS3P6L_15 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Schottky Barrier Rectifiers

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SS3P5L, SS3P6L
Vishay General Semiconductor
Low V_F High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^® Series
K
1
2
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 3.0 A
T_J max.
Package
3.0 A
50 V, 60 V
150 A
20 mJ
0.478 V
150 °C
TO-277A
Diode variations
Single
FEATURES
• Very low profile - typical height of 1.1 mm
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave 
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2.0 A, T_J = 25 °C
Operating junction and storage temperature range
E_AS
T_J, T_STG
SS3P5L
SS3P6L
S35
S36
50
60
3.0
150
20
-55 to +150
UNIT
V
A
A
mJ
°C
Revision: 16-Jan-14
1
Document Number: 88987
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000