SS3P5L Datasheet, PDF (1/5 Pages) Vishay Siliconix – Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

New Product
SS3P5L & SS3P6L
Vishay General Semiconductor
Low V_F High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP^TM Series
FEATURES
• Very low profile - typical height of 1.1 mm
K
• Ideal for automated placement
• Low forward voltage drop, low power losses
1
• High efficiency
2
• Low thermal resistance
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 3.0 A
T_j max.
3A
50 V, 60 V
150 A
20 mJ
0.478 V
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy
at I_AS = 2 A, L = 10 mH, T_j = 25 °C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dv/dt
T_J, T_STG
SS3P5L
SS3P6L
S35
S36
50
60
3.0
150
20
10000
- 55 to + 150
UNIT
V
A
A
mJ
V/µs
°C
Document Number: 88987
Revision: 25-Jun-07
www.vishay.com
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