SS3P4 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Current Density Surface Mount Schottky Rectifier

SS3P4
New Product _{Vishay General Semiconductor}
High-Current Density Surface Mount Schottky Rectifier
DO-220AA (SMP)
MAJOR RATINGS AND CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F
T_j max.
3A
40 V
50 A
11.25 mJ
0.50 V
150 °C
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (see Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_j = 25 °C, I_AS = 1.5 A, L = 10 mH
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dv/dt
T_J, T_STG
SS3P4
34
40
3.0
50
11.25
10000
- 55 to + 150
UNIT
V
A
A
mJ
V/µs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP
MAX.
Maximum instantaneous
forward voltage ⁽¹⁾
at I_F = 3 A,
at I_F = 3 A,
T_j = 25 °C
T_j = 125 °C
V_F
0.55
0.50
0.60
0.55
Maximum reverse current at T_j = 25 °C
rated V_R ⁽¹⁾
T_j = 125 °C
I_R
-
7.5
150
15
Typical junction capacitance at 4.0 V, 1 MHz
C_J
105
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 15 x 15 mm copper pad areas
R_θJL is measured at the terminal of cathode band
R_θJC is measured at the top centre of the body
UNIT
V
µA
mA
pF
Document Number 88954
26-Jun-06
www.vishay.com
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