SS2PH9 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance

New Product
SS2PH9 & SS2PH10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Barrier Rectifiers
High Barrier Technology for Improved High Temperature Performance
eSMP ^TM Series
DO-220AA (SMP)
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
E_AS
V_F at I_F = 1.0 A
I_R max.
T_J max.
2.0 A
90 V, 100 V
50 A
11.25 mJ
0.62 V
1.0 µA
175 °C
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling,
dc-to-dc converters and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy at T_J = 25 °C, I_AS = 1.5 A, L = 10 mH
E_AS
Voltage rate of change (rated V_R)
dV/dt
Operating junction and storage temperature range
T_J, T_STG
SS2PH9
29
90
SS2PH10
210
100
2.0
50
11.25
10 000
- 55 to + 175
UNIT
V
A
A
mJ
V/µs
°C
Document Number: 84682 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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