SS2PH5 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Ideal for automated placement

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SS2PH5, SS2PH6
Vishay General Semiconductor
High Current Density Surface Mount Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
eSMP ^® Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F at I_F = 2.0 A (T_A = 125 °C)
T_J max.
Package
2.0 A
50 V, 60 V
50 A
0.59 V
175 °C
DO-220AA (SMP)
Diode variations
Single die
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection in
commercial, industrial, and automotive applications
FEATURES
• Very low profile - typical height of 1.0 mm
Available
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
I_F(AV) ⁽¹⁾
I_FSM
Operating junction and storage temperature range
T_J, T_STG
Note
(1) _{Free air, mounted on recommended copper pad area}
SS2PH5
SS2PH6
2H5
2H6
50
60
2.0
50
-55 to +175
UNIT
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Instantaneous forward voltage
Reverse current at rated V_R
Typical junction capacitance
I_F = 1.0 A
I_F = 2.0 A
T_A = 25 °C
I_F = 1.0 A
I_F = 2.0 A
T_A = 125 °C
T_A = 25 °C
T_A = 125 °C
4.0 V, 1 MHz
V_F ⁽¹⁾
I_R ⁽²⁾
C_J
0.63
0.72
0.52
0.59
0.2
0.13
93
Notes
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
(2) _{Pulse test: Pulse width  5 ms}
MAX.
-
0.80
-
0.70
2.0
1.0
-
UNIT
V
μA
mA
pF
Revision: 28-Jan-15
1
Document Number: 87741
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000