SS2P4-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Current Density Surface Mount Schottky Barrier Rectifiers

New Product
SS2P2, SS2P3 & SS2P4
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
eSMP ^TM Series
DO-220AA (SMP)
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
2A
V_RRM
20 V, 30 V, 40 V
I_FSM
50 A
E_AS
11.25 mJ
V_F
0.50 V
T_J max.
150 °C
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheelling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
V_RRM
I_F(AV)
I_FSM
Non-repetitive avalanche energy at I_AS = 1.5 A, L = 10 mH, T_J = 25 °C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
dV/dt
T_J, T_STG
SS2P2
22
20
SS2P3
23
30
2.0
50
11.25
10 000
- 55 to + 150
SS2P4
24
40
UNIT
V
A
A
mJ
V/µs
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
Maximum instantaneous forward voltage ⁽¹⁾
I_F = 2 A
I_F = 2 A
T_J = 25 °C
T_J = 125 °C
V_F
Maximum reverse current at rated V_R ⁽²⁾
T_J = 25 °C
T_J = 125 °C
I_R
Typical junction capacitance
4.0 V, 1 MHz
C_J
0.50
0.55
0.43
0.50
-
150
8
15
110
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Document Number: 88910 For technical questions within your region, please contact one of the following:
Revision: 19-May-08
[e-mail], [e-mail], [e-mail]
UNIT
V
µA
mA
pF
www.vishay.com
1