SS2P2 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High Current Density Surface Mount Schottky Barrier Rectifiers

VISHAY
SS2P2, SS2P3 & SS2P4
Vishay Semiconductors
High Current Density Surface Mount
Schottky Barrier Rectifiers
Major Ratings and Characteristics
I_F(AV)
V_RRM
I_FSM
E_AS
V_F
T_j max.
2A
20 V, 30 V, 40 V
50 A
11.25 mJ
0.50 V
150 °C
Features
• Very low profile - typical height of 1.0mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1 per J-STD-020C
• AEC-Q101 qualified
Typical Applications
For use in low voltage high frequency inverters, free-
wheelling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
w _{TA = 25 °C, unless otherwise specified}
Parameter
e _{Device marking code}
N ^{Maximum repetive peak reverse voltage}
Symbol
V_RRM
RMS reverse voltage
V_RWM
DC blocking voltage
V_R
Maximum average forward rectified current see Fig. 1
I_F(AV)
Peak forward surge current 10 ms single half sine-
I_FSM
wave superimposed on rated load
Non-repetitive avalanche energy
E_AS
at I_AS = 1.5 A, L = 10 mH, T_J = 25 °C
Voltage rate of change (rated V_R)
dv/dt
Operating junction and storage temperature range
T_J, T_STG
DO-220AA (SMP)
uct _{Mechanical Data}
d _{Case: DO-220AA (SMP)}
o ^{Epoxy meets UL-94V-0 Flammability rating}
Terminals: Matte Tin plated (E3 Suffix) leads, solder-
r_{able per J-STD-002B and MIL-STD-750, Method}
P²⁰²⁶
Polarity: Color band denotes the cathode end
SS2P2
22
20
14
20
SS2P3
23
30
21
30
2.0
50
11.25
10000
-55 to +150
SS2P4
24
40
28
40
Unit
V
V
V
A
A
mJ
V/us
°C
Document Number 88910
02-Nov-04
www.vishay.com
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