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SS2H9_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Voltage Surface Mount Schottky Rectifier
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SS2H9, SS2H10
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2.0 A
90 V, 100 V
75 A
0.65 V
10 μA
175 °C
DO-214AA
Diode variations
Single
FEATURES
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: TL = 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Voltage rate of change (rated VR)
Operating junction and storage temperature range
IRRM
dV/dt
TJ, TSTG
SS2H9
MS9
90
90
90
SS2H10
MS10
100
100
100
2.0
75
1.0
10 000
-65 to +175
UNIT
V
V
V
A
A
A
V/μs
°C
Revision: 16-Jan-14
1
Document Number: 88750
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000